Physics of Semiconductor Devices tutorial

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1. Introduction to the quantum theory of solids:

  • Formation of energy bands
  • The k-space diagram (two and three dimensional representation)
  • conductors
  •  semiconductors and insulators

2. Electrons and Holes in semiconductors:

  •  Silicon crystal structure
  • Donors and acceptors in the band model
  •  electron effective mass, Density of states
  • Thermal equilibrium
  •  Fermi-Dirac distribution function for electrons and holes
  • Fermi energy
  • Equilibrium distribution of electrons & holes: derivation of n and p from D(E) and f(E),
  •  Fermi level and carrier concentrations
  • The np product and the intrinsic carrier concentration
  •  General theory of n and p
  • Carrier concentrations at extremely high and low temperatures: complete ionization
  • partial ionization and freeze-out
  • Energy-band diagram and Fermi-level
  • Variation of EF with doping concentration and temperature

3. Motion and Recombination of Electrons and Holes:

  • Carrier drift: Electron and hole mobilities
  • Mechanism of carrier scattering
  •  Drift current and conductivity

4. Motion and Recombination of Electrons and Holes:

  •  Carrier diffusion: diffusion current
  • Total current density
  •  relation between the energy diagram and potential
  •  electric field
  • Einstein relationship between diffusion coefficient and mobility
  • Electron-hole recombination
  • Thermal generation

5. PN Junction:

  •  Building blocks of the pn junction theory: Energy band diagram and depletion layer of a pn junction
  • Built-in potential
  • Depletion layer model: Field and potential in the depletion layer
  • depletion-layer width
  •  Reverse-biased PN junction; Capacitance-voltage characteristics
  • Junction breakdown: peak electric field
  •  Tunneling breakdown and avalanche breakdown
  • Carrier injection under forward bias-Quasi-equilibrium boundary condition
  • current continuity equation
  • Excess carriers in forward-biased pn junction
  •  PN diode I-V characteristic
  •  Charge storage

6. The Bipolar Transistor:

  •  Introduction
  •  Modes of operation
  • Minority Carrier distribution
  • Collector current, Base current
  • current gain
  • Base width Modulation by collector current
  • Breakdown mechanism
  •  Equivalent Circuit Models - Ebers -Moll Model
  • 7. Metal-Semiconductor Junction: 
  • Schottky Diodes: Built-in potential
  • Energy-band diagram
  •  I-V characteristics
  •  Comparison of the Schottky barrier diode and the pn-junction diode
  •  Ohmic contacts: tunneling barrier
  •  specific contact resistance

8. MOS Capacitor:

  • The MOS structure
  •  Energy band diagrams
  • Flat-band condition and flat-band voltage
  • Surface accumulation
  •  surface depletion
  •  Threshold condition and threshold voltage
  •  MOS C-V characteristics
  •  Qinv in MOSFET

9. MOS Transistor:

  •  Introduction to the MOSFET
  •  Complementary MOS (CMOS) technology
  •  V-I Characteristics
  •  Surface mobilities and high-mobility FETs
  •  JFET
  •  MOSFET Vt
  •  Body effect and steep retrograde doping
  •  pinch-off voltage

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