1. Introduction to the quantum theory of solids:
- Formation of energy bands
- The k-space diagram (two and three dimensional representation)
- conductors
- semiconductors and insulators
2. Electrons and Holes in semiconductors:
- Silicon crystal structure
- Donors and acceptors in the band model
- electron effective mass, Density of states
- Thermal equilibrium
- Fermi-Dirac distribution function for electrons and holes
- Fermi energy
- Equilibrium distribution of electrons & holes: derivation of n and p from D(E) and f(E),
- Fermi level and carrier concentrations
- The np product and the intrinsic carrier concentration
- General theory of n and p
- Carrier concentrations at extremely high and low temperatures: complete ionization
- partial ionization and freeze-out
- Energy-band diagram and Fermi-level
- Variation of EF with doping concentration and temperature
3. Motion and Recombination of Electrons and Holes:
- Carrier drift: Electron and hole mobilities
- Mechanism of carrier scattering
- Drift current and conductivity
4. Motion and Recombination of Electrons and Holes:
- Carrier diffusion: diffusion current
- Total current density
- relation between the energy diagram and potential
- electric field
- Einstein relationship between diffusion coefficient and mobility
- Electron-hole recombination
- Thermal generation
5. PN Junction:
- Building blocks of the pn junction theory: Energy band diagram and depletion layer of a pn junction
- Built-in potential
- Depletion layer model: Field and potential in the depletion layer
- depletion-layer width
- Reverse-biased PN junction; Capacitance-voltage characteristics
- Junction breakdown: peak electric field
- Tunneling breakdown and avalanche breakdown
- Carrier injection under forward bias-Quasi-equilibrium boundary condition
- current continuity equation
- Excess carriers in forward-biased pn junction
- PN diode I-V characteristic
- Charge storage
6. The Bipolar Transistor:
- Introduction
- Modes of operation
- Minority Carrier distribution
- Collector current, Base current
- current gain
- Base width Modulation by collector current
- Breakdown mechanism
- Equivalent Circuit Models - Ebers -Moll Model
- 7. Metal-Semiconductor Junction:
- Schottky Diodes: Built-in potential
- Energy-band diagram
- I-V characteristics
- Comparison of the Schottky barrier diode and the pn-junction diode
- Ohmic contacts: tunneling barrier
- specific contact resistance
8. MOS Capacitor:
- The MOS structure
- Energy band diagrams
- Flat-band condition and flat-band voltage
- Surface accumulation
- surface depletion
- Threshold condition and threshold voltage
- MOS C-V characteristics
- Qinv in MOSFET
9. MOS Transistor:
- Introduction to the MOSFET
- Complementary MOS (CMOS) technology
- V-I Characteristics
- Surface mobilities and high-mobility FETs
- JFET
- MOSFET Vt
- Body effect and steep retrograde doping
- pinch-off voltage
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